N TYPE GE FOR DUMMIES

N type Ge for Dummies

s is that of the substrate material. The lattice mismatch causes a large buildup of strain Electricity in Ge layers epitaxially developed on Si. This strain Vitality is principally relieved by two mechanisms: (i) technology of lattice dislocations in the interface (misfit dislocations) and (ii) elastic deformation of both the substrate as well as G

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